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XP06401|XP6401 PDF预览

XP06401|XP6401

更新时间: 2024-12-01 23:33:55
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松下 - PANASONIC 晶体晶体管
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4页 104K
描述
Composite Device - Composite Transistors

XP06401|XP6401 数据手册

 浏览型号XP06401|XP6401的Datasheet PDF文件第2页浏览型号XP06401|XP6401的Datasheet PDF文件第3页浏览型号XP06401|XP6401的Datasheet PDF文件第4页 
Composite Transistors  
XP06401 (XP6401)  
Silicon PNP epitaxial planar type  
Unit: mm  
+0.05  
0.12  
–0.02  
For general amplification  
0.2 0.05  
5
6
4
3
Features  
Two elements incorporated into one package  
Reduction of the mounting area and assembly cost by one half  
1
2
(0.65) (0.65)  
1.3 0.1  
2.0 0.1  
Basic Part Number  
2SB0709A (2SB709A) × 2  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
1: Emitter (Tr1)  
2: Emitter (Tr2)  
3: Base (Tr2)  
EIAJ: SC-88  
4: Collector (Tr2)  
5: Base (Tr1)  
6: Collector (Tr1)  
SMini6-G1 Package  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
60  
50  
7  
V
V
Collector current  
IC  
ICP  
PT  
100  
200  
mA  
mA  
mW  
°C  
Marking Symbol: 5O  
Peak collector current  
Total power dissipation  
Junction temperature  
Storage temperature  
Internal Connection  
150  
6
5
4
Tj  
150  
Tstg  
55 to +150  
°C  
Tr2  
Tr1  
1
2
3
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
60  
50  
7  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio  
hFE ratio *  
IC = −10 µA, IE = 0  
IC = −2 mA, IB = 0  
V
IE = −10 µA, IC = 0  
VCB = −20 V, IE = 0  
VCE = −10 V, IB = 0  
VCE = −10 V, IC = −2 mA  
V
0.1  
100  
460  
µA  
µA  
ICEO  
hFE  
160  
hFE(Small/ VCE = −10 V, IC = −2 mA  
Large)  
0.50  
0.99  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = −100 mA, IB = −10 mA  
0.5  
V
MHz  
pF  
fT  
VCB = −10 V, IE = 1 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
80  
Collector output capacitance  
Cob  
2.7  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Note) The part number in the parenthesis shows conventional part number.  
Publication date: February 2004  
SJJ00212BED  
1

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